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INFINEON  IPB067N08N3GATMA1  MOSFET Transistor, N Channel, 80 A, 80 V, 0.0055 ohm, 10 V, 2.8 V

INFINEON IPB067N08N3GATMA1
Technical Data Sheet (1013.96KB) EN Consultaţi toate documentele tehnice

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Prezentare generală a produsului

The IPB067N08N3 G is a N-channel Power MOSFET with performance leading benchmark OptiMOS™ technology. It is the market leader in highly efficient solutions for power generation, power supply and power consumption applications.
  • Optimized technology for DC-to-DC converters
  • Excellent gate charge x RDS (ON) product (FOM)
  • Superior thermal resistance
  • Dual sided cooling
  • Low parasitic inductance
  • Normal level
  • 100% avalanche tested
  • Ideal for high frequency switching and synchronous rectification
  • Qualified according to JEDEC for target applications
  • Halogen-free, Green device

Detalii tehnice

Transistor Polarity:
N Channel
Continuous Drain Current Id:
80A
Drain Source Voltage Vds:
80V
On Resistance Rds(on):
0.0055ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
2.8V
Power Dissipation Pd:
136W
Transistor Case Style:
TO-263
No. of Pins:
3Pins
Operating Temperature Max:
175°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Aplicaţii

  • Power Management;
  • Consumer Electronics;
  • Communications & Networking;
  • Motor Drive & Control;
  • LED Lighting;
  • Automotive;
  • Alternative Energy

Cunoscut şi sub denumirea de

IPB067N08N3 G , SP000443636

Legislaţie şi reglementări privind protecţia mediului

Nivel de sensibilitate la umezeală:
MSL 1 - Unlimited
Ţara de origine:
Malaysia

Tara in care ultimul proces semnificativ de fabricare a fost efectuat

Conformitate cu RoHS:
Da
Nr. tarif:
85412900
Greutate (kg):
.00181