Low

ON SEMICONDUCTOR  MMSD301T1G  RF Schottky Diode, Barrier, Single, 30 V, 200 mA, 600 mV, 0.9 pF, SOD-123

ON SEMICONDUCTOR MMSD301T1G
Technical Data Sheet (137.88KB) EN Consultaţi toate documentele tehnice

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Prezentare generală a produselor

The MMSD301T1G is a Schottky Barrier Diode designed for high-efficiency UHF and VHF detector applications. It is readily available to many other fast switching RF and digital applications.
  • Extremely low minority carrier lifetime
  • Very low capacitance
  • Low reverse leakage
  • -55 to 125°C Operating junction temperature range

INFORMAŢII DESPRE PRODUSE

Diode Configuration:
Single
Reverse Voltage Vr:
30V
Forward Current If Max:
200mA
Forward Voltage VF Max:
600mV
Capacitance Ct:
0.9pF
Diode Case Style:
SOD-123
No. of Pins:
2 Pin
Packaging:
Cut Tape
Product Range:
MMSD3 Series
SVHC:
No SVHC (17-Dec-2015)

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Aplicaţii

  • RF Communications;
  • Sensing & Instrumentation;
  • Industrial

Legislaţie şi reglementări privind protecţia mediului

Ţara de origine:
China

Tara in care ultimul proces semnificativ de fabricare a fost efectuat

Conformitate cu RoHS:
Da
Nr. tarif:
85411000
Greutate (kg):
.001

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