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ROHM  UMB2NTN  Bipolar Transistor Array, Dual, PNP, 50 V, 150 mW, -100 mA, 68 hFE, SOT-363

ROHM UMB2NTN
Technical Data Sheet (615.42KB) EN Consultaţi toate documentele tehnice

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Prezentare generală a produsului

The UMB2NTN is a dual PNP complex digital Bipolar Transistor Array with bias resistors enables the configuration of an inverter circuit without connecting external input resistors. The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing inner circuit of the input. They also have the advantage of completely eliminating parasitic effects. It is suitable for inverter circuit, interface circuit, driver circuit applications.
  • Built-in biasing resistors (R1 = R2 = 47kR)
  • Only the ON/OFF conditions need to be set for operation, making the circuit design easy

Detalii tehnice

Transistor Polarity:
PNP
Collector Emitter Voltage V(br)ceo:
50V
Power Dissipation Pd:
150mW
DC Collector Current:
-100mA
DC Current Gain hFE:
68hFE
Transistor Case Style:
SOT-363
No. of Pins:
6Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (15-Jun-2015)

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Aplicaţii

  • Motor Drive & Control;
  • Communications & Networking;
  • Industrial;
  • Power Management

Legislaţie şi reglementări privind protecţia mediului

Nivel de sensibilitate la umezeală:
MSL 1 - Unlimited
Ţara de origine:
Japan

Tara in care ultimul proces semnificativ de fabricare a fost efectuat

Conformitate cu RoHS:
Da
Nr. tarif:
85412100
Greutate (kg):
.000035

Alternative

Bipolar (BJT) Single Transistor, Dual PNP, 50 V, 250 mW, 100 mA, 80 hFE

ON SEMICONDUCTOR

8.290:  În stoc

Preţ pentru: Bucată

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