Low

ROHM  UMZ1NTR  Bipolar Transistor Array, Dual, NPN, PNP, 50 V, 150 mW, 150 mA, 120 hFE, SOT-363

ROHM UMZ1NTR
Technical Data Sheet (81.50KB) EN Consultaţi toate documentele tehnice

Imaginea are caracter strict ilustrativ. Vă rugăm consultaţi descrierea produsului.

Prezentare generală a produsului

The UMZ1NTR is a NPN-PNP general purpose dual Bipolar Transistor with epitaxial planar silicon structure. It has mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. The device integrating two transistors is available in ultra-compact package, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillators and driver ICs.
  • Transistor elements are independent, eliminating interference
  • Mounting area can be cut in half
  • Ultra-compact complex digital transistor
  • Potential divider type
  • Small surface-mount package

Detalii tehnice

Transistor Polarity:
NPN, PNP
Collector Emitter Voltage V(br)ceo:
50V
Power Dissipation Pd:
150mW
DC Collector Current:
150mA
DC Current Gain hFE:
120hFE
Transistor Case Style:
SOT-363
No. of Pins:
6Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (15-Jun-2015)

Găsiţi produse similare  grupate în funcţie de atributele comune

Aplicaţii

  • Motor Drive & Control;
  • Communications & Networking;
  • Portable Devices;
  • Industrial;
  • Power Management

Legislaţie şi reglementări privind protecţia mediului

Nivel de sensibilitate la umezeală:
MSL 1 - Unlimited
Ţara de origine:
Japan

Tara in care ultimul proces semnificativ de fabricare a fost efectuat

Conformitate cu RoHS:
Da
Nr. tarif:
85412100
Greutate (kg):
.000035