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HUF75345G3
Power MOSFET, General Purpose, N Channel, 55 V, 75 A, 0.007 ohm, TO-247, Through Hole
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Detalii tehnice
ProducătorONSEMI
Nr. de reper producătorHUF75345G3
Cod de comandă1076348
Fişă tehnică
Channel TypeN Channel
Drain Source Voltage Vds55V
Continuous Drain Current Id75A
Drain Source On State Resistance0.007ohm
Transistor Case StyleTO-247
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation325W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
Alternative pentru HUF75345G3
3 produse găsite
Prezentare generală a produsului
The HUF75345G3 is a N-channel Power MOSFET manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible ON-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, relay drivers, low-voltage bus switches and power management in battery-operated products.
- Peak current vs. pulse width curve
- UIS Rating curve
- Simulation models - Temperature compensated PSPICE® & SABER™, thermal impedance SPICE & SABER
Aplicaţii
Power Management, Motor Drive & Control, Portable Devices
Specificaţii tehnice
Channel Type
N Channel
Continuous Drain Current Id
75A
Transistor Case Style
TO-247
Rds(on) Test Voltage
10V
Power Dissipation
325W
Operating Temperature Max
175°C
Qualification
-
Drain Source Voltage Vds
55V
Drain Source On State Resistance
0.007ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
Documentaţie tehnică (2)
Legislaţie şi reglementări privind protecţia mediului
Ţara de origine:
Tara in care ultimul proces semnificativ de fabricare a fost efectuatŢara de origine:China
Tara in care ultimul proces semnificativ de fabricare a fost efectuat
Tara in care ultimul proces semnificativ de fabricare a fost efectuatŢara de origine:China
Tara in care ultimul proces semnificativ de fabricare a fost efectuat
Nr. tarif:85412900
US ECCN:EAR99
EU ECCN:NLR
Conformitate cu RoHS:Y-Ex
RoHS
Conform cu RoHS în ceea ce priveşte ftalaţii:În aşteptare
Descărcarea Certificatului de conformitate a produsului
Certificat de conformitate produs
Greutate (kg):.006