HMC349AMS8GETR

HMC349AMS8G is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (PHEMT), single-pole, double throw (SPDT) switch specified from 100MHz to 4GHz. It is well suited for cellular infrastructure applications by yielding high isolation of 57dB, low insertion loss of 0.9dB, high input IP3 of 52dBm, and high input P1dB of 34dBm. It operates with a single positive supply voltage from 3V to 5V and provides a CMOS-/TTL-compatible control interface. It is widely used in applications such as cellular/4G infrastructure, wireless infrastructure, mobile radios, test equipment etc.

• Nonreflective, 50 ohm design
• Through path is 33.5dB typ at (VDD = 5V, TCASE = 85°C)
• Terminated path is 26.5dB typ at (VDD = 3V to 5V, TCASE = 85°C)
• All off state control
• Rise and fall time is 60ns typ at (10% to 90% of radio frequency (RF) output)
• Supply current is 1.2mA typ at (VDD = 3V to 5V)
• Operating temperature range from -40°C to +125°C
• Package style is 8-lead mini small outline package with exposed pad [MINI-SO-EP]

Note

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