HMC430LP4E

HMC430LP4E are GaAs InGaP heterojunction bipolar transistor (HBT) MMIC VCO with integrated resonators, negative resistance devices, varactor diodes, and buffer amplifier. The VCO’s phase noise performance is excellent over temperature, shock, vibration and process due to the oscillator’s monolithic structure. Typical application includes low noise MMIC VCO w/Buffer Amplifier for C-Band applications such as 802.11a & HiperLAN WLAN, VSAT Radios, UNII & Point-to-Point Radios.

• No external resonator needed
• Frequency range from 5.0 to 5.5GHz (TA = +25° C, Vcc = +3V)
• Power output is 2dBm (typ, TA = +25°C, Vcc = +3V)
• SSB phase noise at 100KHz offset, Vtune= +5V at RFOUT is -103dBc/Hz (typ, TA = +25°C, Vcc = +3V)
• Tune voltage range from 0 to 10V (Vtune, TA = +25°C, Vcc = +3V)
• Supply current (Icc) (Vcc = +3V) is 27mA (typ, TA = +25°C, Vcc = +3V)
• Tune port leakage current (Vtune= 13V) is 10µA (max, TA = +25°C, Vcc = +3V)
• Output return loss is 6dB (typ, TA = +25°C, Vcc = +3V)
• Frequency drift rate is 0.8MHz/°C (typ, TA = +25°C, Vcc = +3V)
• QFN package, operating temperature range from -40°C to +85°C

Note

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