HMC509LP5E

HMC509LP5E is a GaAs InGaP heterojunction bipolar transistor (HBT) MMIC VCO. This integrates resonators, negative resistance devices, varactor diodes and feature a half frequency output. The VCO’s phase noise performance is excellent over temperature, shock, and process due to the oscillator’s monolithic structure. Typical application includes VSAT radio, point to point/multi--point radio, test equipment and industrial controls, military end-use.

• No external resonator needed
• Frequency range from 7.8 to 8.8GHz (Fo, TA = +25° C, Vcc = +5V)
• Power output is +10dBm (min, RFOUT, TA = +25° C, Vcc = +5V)
• SSB phase noise at 100KHz offset, Vtune= +5V at RFOUT is -115dBc/Hz (typ, TA = +25° C, Vcc = +5V)
• Tune voltage range from 2 to 13V (TA = +25° C, Vcc = +5V)
• Supply current (Icc) (Vcc = +5.0V) is 250mA (typ, TA = +25°C, Vcc = +5V)
• Tune port leakage current (Vtune= 13V) is 10µA (max, TA = +25°C, Vcc = +5V)
• Output return loss is 2dB (typ, TA = +25°C, Vcc = +5V)
• Frequency drift rate is 0.9MHz/°C (typ, TA = +25°C, Vcc = +5V)
• QFN package, operating temperature range from -40 to +85°C

Note

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