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Prezentare generală a produsului
The HSMS-2850-TR1G is a 3-pin single surface-mount zero bias Schottky Detector Diode has been designed and optimized for use in small signal (pin <lt/>-20dBm) applications at frequencies below 1.5GHz. They are ideal for RF/ID and RF Tag applications where primary (DC bias) power is not available. The Schottky barrier diode chip consists of a metal-semiconductor barrier formed by deposition of a metal layer on a semiconductor.
- High detection sensitivity
- Low flicker noise
- Low FIT (failure in time) rate
- Better thermal conductivity for higher power dissipation
- 175μA at 2V Maximum reverse leakage current
- 8kΩ Typical video resistance
- 500°C/W Thermal resistance
- 150°C Junction temperature
Aplicaţii
Signal Processing
Avertismente
ESD sensitive device, take proper precaution while handling the device.
Specificaţii tehnice
Reverse Voltage
2V
Forward Current If Max
1mA
Diode Capacitance
0.3pF
Product Range
HSMS
Forward Current
1mA
Forward Voltage
250mV
Operating Temperature Max
150°C
Documentaţie tehnică (2)
Legislaţie şi reglementări privind protecţia mediului
Ţara de origine:
Tara in care ultimul proces semnificativ de fabricare a fost efectuatŢara de origine:Malaysia
Tara in care ultimul proces semnificativ de fabricare a fost efectuat
Tara in care ultimul proces semnificativ de fabricare a fost efectuatŢara de origine:Malaysia
Tara in care ultimul proces semnificativ de fabricare a fost efectuat
Nr. tarif:85411000
US ECCN:EAR99
EU ECCN:NLR
Conformitate cu RoHS:Da
RoHS
Conform cu RoHS în ceea ce priveşte ftalaţii:În aşteptare
Descărcarea Certificatului de conformitate a produsului
Certificat de conformitate produs
Greutate (kg):.000018