BGSX22G5A10E6327XTSA1

BGSX22G5A10E6327XTSA1 is a DPDT antenna cross switch. The BGSX22G5A10 RF MOS switch is specifically designed for LTE and WCDMA triple antenna applications. This DPDT offers low insertion loss and low harmonic generation paired with high isolation between RF ports. The switch is controlled via a GPIO interface. The on-chip controller allows power-supply voltages from 1.65V to 3.4V. The switch features direct-connect-to-battery functionality and DC-free RF ports. Unlike GaAs technology, external DC blocking capacitors at the RF ports are only required if DC voltage is applied externally. This RF switch is manufactured in Infineon’s patented MOS technology, offering the performance of GaAs with the economy and integration of conventional CMOS including the inherent higher ESD robustness.

• Qualified for industrial applications according to the relevant tests of JEDEC47/20/22
• RF CMOS DPDT antenna cross switch with power handling capability of up to 37dBm
• Ultra-low insertion loss and harmonics generation
• High port-to-port-isolation, general purpose input-output (GPIO) interface
• No decoupling capacitors required if no DC applied on RF lines
• No power supply blocking required, high EMI robustness
• Supply current is 55µA typ at TA=-40 to 85°C, PIN=0dBm, supply voltage VDD= 1.65V to 3.4V
• 0.1 to 6.0GHz coverage
• ATSLP-10-50 package
• Ambient temperature range from -40 to 85°C

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Stresses above the maximum values listed here may cause permanent damage to the device.