BGSX22G6U10E6327XTSA1

BGSX22G6U10E6327XTSA1 is a DPDT cross switch with GPIO control interface. The BGSX22G6U10 RF CMOS switch is specifically designed for GSM, WCDMA, LTE and 5G applications. This DPDT offers low insertion loss even at high frequencies of up to 7.125GHz, low harmonic generation along with high isolation between RF ports. In addition, the fast switching speed enables 5G-SRS applications. The switch is controlled via a GPIO interface. The on-chip controller allows power-supply voltages from 1.6V to 3.6V. The switch features direct-connect-to-battery functionality and DC-free RF ports. Unlike GaAs technology, external DC blocking capacitors at the RF Ports are only required if DC voltage is applied externally. Potential applications are RF path routing/swapping for cellular mobile devices.

• High linearity up to 39 dBm peak power at duty cycle 25%, frequency 0.4-7.125GHz, VSWR 1:1
• Low current consumption
• No decoupling capacitors required for typical applications
• Supply current is 25µA typ at PRF=0dBm
• Control voltage low is 0.3V maximum
• Control current is 10nA maximum
• PG-ULGA-10-1 package
• Ambient temperature range from -40 to 85°C

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Stresses above the maximum values listed here may cause permanent damage to the device.