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| Cantitate | Preț (fără TVA) |
|---|---|
| 1+ | 20,520 lei |
| 10+ | 15,600 lei |
| 25+ | 14,380 lei |
| 50+ | 13,670 lei |
| 100+ | 12,340 lei |
| 250+ | 11,790 lei |
| 500+ | 11,380 lei |
| 1000+ | 11,020 lei |
Detalii tehnice
Prezentare generală a produsului
The BTS640S2G is a N-channel high-side vertical Power FET Switch with charge pump, ground referenced CMOS compatible input and diagnostic feedback and proportional sense of load current, monolithically integrated in smart SIPMOS® technology. It provides embedded protective functions, under-voltage and overvoltage shutdown with auto-restart and hysteresis.
- Short-circuit protection
- Current limitation
- Proportional load current sense
- CMOS compatible input
- Open drain diagnostic output
- Fast demagnetization of inductive loads
- Overload protection
- Thermal shutdown
- Overvoltage protection including load dump
- Reverse battery protection
- Loss of ground and loss of VBB protection
- Electrostatic discharge (ESD) protection
- High voltage capability
- Benchmark energy robustness
Aplicaţii
Industrial, Computers & Computer Peripherals, Automotive
Avertismente
ESD sensitive device, take proper precaution while handling the device. Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Specificaţii tehnice
High Side
34V
0.03ohm
7Pins
Active High
-40°C
AEC-Q100
MSL 3 - 168 hours
AEC-Q100
1Channels
24A
TO-263 (D2PAK)
Yes
1Outputs
150°C
-
No SVHC (21-Jan-2025)
TO-263 (D2PAK)
Documentaţie tehnică (1)
Produse asociate
1 produs găsit
Legislaţie şi reglementări privind protecţia mediului
Tara in care ultimul proces semnificativ de fabricare a fost efectuatŢara de origine:Malaysia
Tara in care ultimul proces semnificativ de fabricare a fost efectuat
RoHS
RoHS
Certificat de conformitate produs