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Cantitate | Preț (fără TVA) |
---|---|
1+ | 1.065,480 lei |
Detalii tehnice
Prezentare generală a produsului
EVAL-2ED2101-HB-LLC features the 2ED2101S06F SOI level-shift gate driver for driving the primary-side half bridge and the dual-channel low-side gate driver 2ED24427N01F with pulse transformer to ensure control signal isolation for the secondary rectifying stage. Also, the 2ED24427N01F is used to drive the synchronous rectification output stage. It includes all of the required elements for an LLC converter, such as the high performance resonant controller ICE2HS01G, IPL60R650P6S 600V CoolMOS™ P6 transistors, and BSC022N04LS6 OptiMOS™ switches. This evaluation board demonstrates our thin-film SOI technology and advanced control for HB-LLC converter with synchronous rectification at the secondary side. For a flexible input DC voltage between 360- 425V, it provides a 12V output voltage with maximum currents up to 16.7A.
- 650V HB-LLC direct drive topology eliminates cost / space of high side drive pulse transformer
- 500KHz switching reduces cost / size of resonant components
- Transformer integrates resonant inductance for further cost / size savings
Specificaţii tehnice
Infineon
Power Management
Evaluation Board 2ED24427N01F/2ED2101S06F
No SVHC (21-Jan-2025)
2ED24427N01F, 2ED2101S06F
Isolated Gate Driver
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Documentaţie tehnică (1)
Legislaţie şi reglementări privind protecţia mediului
Tara in care ultimul proces semnificativ de fabricare a fost efectuatŢara de origine:Germany
Tara in care ultimul proces semnificativ de fabricare a fost efectuat
RoHS
RoHS
Certificat de conformitate produs