Detalii tehnice
Alternative pentru IGO60R070D1AUMA1
1 produs găsit
Prezentare generală a produsului
Infineon launches a GaN enhancement mode high electron mobility transistor (e‑mode HEMT) portfolio with industry‑leading field performance, enabling rugged and reliable systems at an attractive overall system cost. CoolGaN™ transistors are built with the most reliable GaN technology and are tailor‑made to deliver the market’s highest efficiency and density levels in switched mode power supplies. The application‑based qualification approach extends beyond that of other GaN products in the market.
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Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Specificaţii tehnice
600V
0.055ohm
PG-DSO-20-85
20Pins
-
31A
5.8nC
Surface Mount
CoolGaN
No SVHC (23-Jan-2024)
Documentaţie tehnică (2)
Produse asociate
4 produse găsite
Legislaţie şi reglementări privind protecţia mediului
Tara in care ultimul proces semnificativ de fabricare a fost efectuatŢara de origine:Indonesia
Tara in care ultimul proces semnificativ de fabricare a fost efectuat
RoHS
RoHS
Certificat de conformitate produs