IPD25CN10NGATMA1
Power MOSFET, N Channel, 100 V, 35 A, 0.025 ohm, TO-252 (DPAK), Surface Mount
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| Cantitate | Preț (fără TVA) |
|---|---|
| 1+ | 7,060 lei |
| 10+ | 4,960 lei |
| 100+ | 3,560 lei |
| 500+ | 2,840 lei |
| 1000+ | 2,600 lei |
| 5000+ | 2,240 lei |
Detalii tehnice
Prezentare generală a produsului
The IPD25CN10N G is a 100V N-channel Power MOSFET that offers superior solutions for high efficiency and high power-density SMPS. Compared to other transistors, this MOSFET achieves a reduction of 30% in both RDS (on) and FOM (Figure of Merit). The OptiMOS™ MOSFET offers industry's lowest RDS (on) within the voltage classes. It is ideally suited for high frequency switching applications and optimized technology for DC-DC converters.
- Excellent switching performance
- Environmentally-friendly
- Increased efficiency
- Highest power density
- Less paralleling required
- Smallest board-space consumption
- Easy to design
Aplicaţii
Power Management, Motor Drive & Control, Industrial, Audio
Avertismente
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Specificaţii tehnice
N Channel
35A
TO-252 (DPAK)
10V
71W
175°C
-
No SVHC (21-Jan-2025)
100V
0.025ohm
Surface Mount
3V
3Pins
-
MSL 3 - 168 hours
Documentaţie tehnică (1)
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Legislaţie şi reglementări privind protecţia mediului
Tara in care ultimul proces semnificativ de fabricare a fost efectuatŢara de origine:Malaysia
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RoHS
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