IR2117SPBF
MOSFET IC, High Side, 10V-20V Supply, 500mA Out, 105ns Delay, SOIC-8
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| Cantitate | Preț (fără TVA) |
|---|---|
| 1+ | 7,620 lei |
| 10+ | 5,840 lei |
| 50+ | 4,900 lei |
| 100+ | 4,340 lei |
| 250+ | 4,260 lei |
| 500+ | 4,140 lei |
| 1000+ | 4,050 lei |
| 2500+ | 4,020 lei |
Detalii tehnice
Prezentare generală a produsului
The IR2117SPBF is a single-channel Power MOSFET and IGBT Driver features proprietary HVIC and latch immune CMOS technologies enables ruggedized monolithic construction. The logic input is compatible with standard CMOS outputs. The output driver features a high pulse current buffer stage designed for minimum cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high or low-side configuration which operates up to 600V.
- Floating channel designed for bootstrap operation
- Tolerant to negative transient voltage (dV/dt immune)
- Under-voltage lockout
- CMOS Schmitt-triggered inputs with pull-down
- Output in phase with input
- High voltage
- High speed
Aplicaţii
Power Management
Avertismente
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Specificaţii tehnice
1Channels
High Side
8Pins
Surface Mount
250mA
10V
-40°C
125ns
-
MSL 2 - 1 year
-
MOSFET
SOIC
Non-Inverting
500mA
20V
125°C
105ns
-
No SVHC (21-Jan-2025)
Documentaţie tehnică (4)
Legislaţie şi reglementări privind protecţia mediului
Tara in care ultimul proces semnificativ de fabricare a fost efectuatŢara de origine:Thailand
Tara in care ultimul proces semnificativ de fabricare a fost efectuat
RoHS
RoHS
Certificat de conformitate produs