IRF7343TRPBF
Dual MOSFET, Complementary N and P Channel, 55 V, 55 V, 4.7 A, 4.7 A, 0.043 ohm
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| Cantitate | Preț (fără TVA) |
|---|---|
| 1+ | 6,760 lei |
| 10+ | 4,470 lei |
| 100+ | 3,090 lei |
| 500+ | 2,450 lei |
| 1000+ | 2,320 lei |
| 5000+ | 2,050 lei |
Detalii tehnice
Prezentare generală a produsului
The IRF7343TRPBF is a dual N/P-channel MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device. The HEXFET Power MOSFET is extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized lead-frame for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space.
- Generation V technology
- Ultra low ON-resistance
- Surface-mount device
- Fully avalanche rated
Aplicaţii
Industrial, Power Management
Specificaţii tehnice
Complementary N and P Channel
55V
4.7A
0.043ohm
8Pins
2W
-
-
55V
4.7A
0.043ohm
SOIC
2W
150°C
-
No SVHC (21-Jan-2025)
Documentaţie tehnică (3)
Produse asociate
3 produse găsite
Legislaţie şi reglementări privind protecţia mediului
Tara in care ultimul proces semnificativ de fabricare a fost efectuatŢara de origine:Philippines
Tara in care ultimul proces semnificativ de fabricare a fost efectuat
RoHS
RoHS
Certificat de conformitate produs