HIP2100IBZ

The HIP2100IBZ is a 100V high frequency half bridge N-channel power MOSFET Driver IC. The low-side and high-side gate drivers are independently controlled and matched to 8ns. This gives the user maximum flexibility in dead-time selection and driver protocol. Under-voltage protection on both the low-side and high-side supplies force the outputs low. An on-chip diode eliminates the discrete diode required with other driver ICs. A new level-shifter topology yields the low-power benefits of pulsed operation with the safety of DC operation. Unlike some competitors, the high-side output returns to its correct state after a momentary under-voltage of the high-side supply.

• Drives N-channel MOSFET half bridge
• Bootstrap supply maximum voltage to 114VDC
• On-chip 1Ω bootstrap diode
• Fast propagation times for multi-MHz circuits
• Drives 1000pF load with rise and fall times typical 10ns
• CMOS input thresholds for improved noise immunity
• Independent inputs for non-half bridge topologies
• No start-up problems
• Outputs unaffected by supply glitches, HS ringing below ground or HS slewing at high dv/dt
• Low power consumption
• Wide supply range
• Supply under-voltage protection
• 3Ω Driver output resistance
• Near chip scale package footprint, which improves PCB efficiency and has a thinner profile

Aplicaţii

Power Management

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ESD sensitive device, take proper precaution while handling the device. Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.