Aveți nevoie de mai mult?
| Cantitate | Preț (fără TVA) |
|---|---|
| 1+ | 15,600 lei |
| 10+ | 11,730 lei |
| 25+ | 10,570 lei |
| 50+ | 9,400 lei |
| 100+ | 8,940 lei |
| 250+ | 8,480 lei |
| 500+ | 8,180 lei |
| 1000+ | 7,920 lei |
Detalii tehnice
Prezentare generală a produsului
IXDN609YI is a 9-ampere low-side ultrafast MOSFET high-speed gate driver. It is especially well suited for driving the latest IXYS MOSFETs and IGBTs. The IXD_609 high-current output can source and sink 9A of peak current while producing voltage rise and fall times of less than 25ns. The input is CMOS compatible, and is virtually immune to latch-up. Proprietary circuitry eliminates cross-conduction and current “shoot-through.” Low propagation delay and fast, matched rise and fall times make the ideal for high-frequency and high-power applications. Application includes efficient power MOSFET and IGBT switching, switch mode power supplies, motor controls, DC to DC converters, class-D switching amplifiers, pulse transformer driver.
- 5-pin TO-263 package type
- Wide operating voltage range from 4.5V to 35V
- Operating temperature range from -40°C to +125°C
- Logic input withstands negative swing of up to 5V
- Matched rise and fall times, low propagation delay time
- Low 10µA supply current, low output impedance
- Configured as a non-inverting driver
Specificaţii tehnice
1Channels
Low Side
5Pins
Surface Mount
9A
4.5V
-40°C
40ns
-
MSL 3 - 168 hours
-
IGBT, MOSFET
TO-263 (D2PAK)
Non-Inverting
9A
35V
125°C
42ns
-
To Be Advised
Documentaţie tehnică (2)
Legislaţie şi reglementări privind protecţia mediului
Tara in care ultimul proces semnificativ de fabricare a fost efectuatŢara de origine:China
Tara in care ultimul proces semnificativ de fabricare a fost efectuat
RoHS
RoHS
Certificat de conformitate produs