FFSB20120A-F085
Silicon Carbide Schottky Diode, EliteSiC, EliteSiC Series, Single, 1.2 kV, 20 A, 120 nC
Anunțați-mă când există în stoc
| Cantitate | Preț (fără TVA) |
|---|---|
| 1+ | 55,730 lei |
| 5+ | 49,780 lei |
| 10+ | 43,840 lei |
| 50+ | 39,570 lei |
| 100+ | 35,260 lei |
| 250+ | 34,540 lei |
Detalii tehnice
Prezentare generală a produsului
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
- Max Junction Temperature 175°C
- AEC−Q101 qualified
- Avalanche Rated 200 mJ
- No Reverse Recovery/No Forward Recovery
- Ease of Paralleling
- High Surge Current Capacity
- Positive Temperature Coefficient
Avertismente
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Specificaţii tehnice
EliteSiC Series
1.2kV
120nC
3 Pin
Surface Mount
Lead (27-Jun-2024)
Single
20A
TO-263 (D2PAK)
175°C
AEC-Q101
Documentaţie tehnică (1)
Legislaţie şi reglementări privind protecţia mediului
Tara in care ultimul proces semnificativ de fabricare a fost efectuatŢara de origine:China
Tara in care ultimul proces semnificativ de fabricare a fost efectuat
RoHS
RoHS
Certificat de conformitate produs