HGTG11N120CND
IGBT, 43 A, 2.4 V, 298 W, 1.2 kV, TO-247, 3 Pins
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| Cantitate | Preț (fără TVA) |
|---|---|
| 1+ | 34,340 lei |
| 10+ | 25,150 lei |
| 100+ | 20,320 lei |
| 500+ | 18,030 lei |
| 1000+ | 16,000 lei |
Detalii tehnice
Prezentare generală a produsului
The HGTG11N120CND is a 1200V N-channel IGBT with anti-parallel hyper fast diode. It is in a non-punch through (NPT) IGBT design. This NPT series is a new member of the MOS gated high voltage switching IGBT family. IGBT combines the best features of MOSFET and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. Offers lower conduction loss and lower switching loss for designing high efficiency and reliable systems. Optimized manufacturing process results in better control and repeatability of the top-side structure, resulting in tighter specifications and better EMI performance. This product is general usage and suitable for many different applications.
- 340ns at TJ = 150°C Fall time
Specificaţii tehnice
43A
298W
TO-247
150°C
-
Lead (25-Jun-2025)
2.4V
1.2kV
3Pins
Surface Mount
-
Documentaţie tehnică (2)
Produse asociate
2 produse găsite
Legislaţie şi reglementări privind protecţia mediului
Tara in care ultimul proces semnificativ de fabricare a fost efectuatŢara de origine:China
Tara in care ultimul proces semnificativ de fabricare a fost efectuat
RoHS
RoHS
Certificat de conformitate produs