FDV301N

The FDV301N is a 25V N-channel Digital Field Effect Transistor produced using high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. It has been designed especially for low voltage applications as a replacement for digital transistors. Since bias resistors are not required, this one N-channel FET can replace several different digital transistors, with different bias resistor values. This product is general usage and suitable for many different applications.

• Very low level gate drive requirements allowing direct operation in 3V circuits (VGS(th)<lt/>1.06V)
• Gate-source zener for ESD ruggedness (<gt/>6kV human body model)
• Replace multiple NPN digital transistors with one DMOS FET
• 8V gate source voltage (VGSS)
• 357°C/W thermal resistance, junction to ambient

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Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.