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| Cantitate | Preț (fără TVA) |
|---|---|
| 1+ | 9,400 lei |
| 10+ | 9,190 lei |
| 25+ | 9,040 lei |
| 50+ | 8,840 lei |
| 100+ | 8,640 lei |
| 250+ | 8,480 lei |
| 500+ | 8,280 lei |
| 1000+ | 8,080 lei |
Detalii tehnice
Prezentare generală a produsului
SCALE-iDriver family single channel IGBT and MOSFET gate driver in an eSOP package. Reinforced galvanic isolation is provided by Power Integrations’ revolutionary solid insulator FluxLink technology. Up to 5A peak output drive current enables the product to drive devices with nominal currents of up to 300A. For gate drive requirements that exceed the stand-alone capability of SID1102K, additionally AUXGL and AUXGH output pins can drive external n-channel MOSFETs as a booster stage, giving customers full freedom and control of their system design. Controller (PWM) signals are compatible with 5V CMOS logic, which may also be adjusted to 15 V levels by using external resistor divider. It features 100% production partial discharge test and reinforced insulation meets VDE V 0884-10. Applications include general purpose and servo drives, UPS, solar, welding inverters and power supplies.
- Highly Integrated, compact footprint
- Single channel providing up to 5A peak gate drive current
- Up to 5A IGBT/MOSFET gate driver with reinforced galvanic isolation up to 1200V blocking voltage
- Auxiliary outputs for external booster stage for increased peak drive current
- Integrated FluxLink™ technology providing safe isolation between primary and secondary-side
- Rail-to-rail stabilized output voltage, unipolar supply voltage for secondary-side
- Suitable for 600V / 650V / 1200V IGBT and MOSFET switches
- Up to 75KHz switching frequency, propagation delay jitter of ±5ns
- High common mode transient immunity
- Undervoltage lock-out protection for primary and secondary-side (UVLO)
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Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Specificaţii tehnice
1Channels
High Side and Low Side
16Pins
Surface Mount
-
4.75V
-40°C
262ns
SCALE-iDriver
MSL 3 - 168 hours
Isolated
IGBT, MOSFET
eSOP
-
-
5.25V
125°C
262ns
-
No SVHC (21-Jan-2025)
Documentaţie tehnică (2)
Legislaţie şi reglementări privind protecţia mediului
Tara in care ultimul proces semnificativ de fabricare a fost efectuatŢara de origine:Thailand
Tara in care ultimul proces semnificativ de fabricare a fost efectuat
RoHS
RoHS
Certificat de conformitate produs