BUL1102EFP
Bipolar (BJT) Single Transistor, NPN, 450 V, 4 A, 30 W, TO-220FP, Through Hole
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| Cantitate | Preț (fără TVA) |
|---|---|
| 1+ | 10,520 lei |
| 10+ | 5,940 lei |
| 100+ | 4,630 lei |
| 500+ | 3,930 lei |
| 1000+ | 3,610 lei |
| 5000+ | 3,300 lei |
Detalii tehnice
Prezentare generală a produsului
The BUL1102EFP is a NPN fast-switching Power Transistor manufactured in Multi Epitaxial Planar technology. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA. It has an intrinsic ruggedness which enables the transistor to withstand a high collector current level during breakdown condition, without using the Transil™ protection usually necessary in typical converters for lamp ballast.
- High voltage capability
- Very high switching speed
Aplicaţii
Industrial, Power Management
Avertismente
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Specificaţii tehnice
NPN
4A
TO-220FP
3Pins
20hFE
-
No SVHC (21-Jan-2025)
450V
30W
Through Hole
-
150°C
-
Documentaţie tehnică (2)
Produse asociate
1 produs găsit
Legislaţie şi reglementări privind protecţia mediului
Tara in care ultimul proces semnificativ de fabricare a fost efectuatŢara de origine:China
Tara in care ultimul proces semnificativ de fabricare a fost efectuat
RoHS
RoHS
Certificat de conformitate produs