STPSC30H12CWL
Silicon Carbide Schottky Diode, Dual Common Cathode, 1.2 kV, 30 A, 94 nC, TO-247
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| Cantitate | Preț (fără TVA) |
|---|---|
| 1+ | 47,500 lei |
| 5+ | 46,020 lei |
| 10+ | 44,500 lei |
| 50+ | 43,030 lei |
| 100+ | 41,500 lei |
| 250+ | 40,030 lei |
Detalii tehnice
Prezentare generală a produsului
The Schottky Silicon-Carbide Diodes from STMicroelectronics take advantage of SiC's impressive performance over standard Silicon. Offering double or triple the bandgap in comparison to silicon means that SIC devices can tolerate much higher voltages and electric fields. The low reverse recovery characteristics increase efficiency in all systems thanks to their low forward voltage and make ST's silicon-carbide diodes a key contributor to energy savings. These savings are found in SMPS applications as well as solar energy conversion, EV or HEV charging stations, and many more. The product ranges from 600V to 1200Vin through hole and SMD packages.
Specificaţii tehnice
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1.2kV
94nC
3 Pin
Through Hole
No SVHC (21-Jan-2025)
Dual Common Cathode
30A
TO-247
175°C
-
Documentaţie tehnică (2)
Legislaţie şi reglementări privind protecţia mediului
Tara in care ultimul proces semnificativ de fabricare a fost efectuatŢara de origine:Philippines
Tara in care ultimul proces semnificativ de fabricare a fost efectuat
RoHS
RoHS
Certificat de conformitate produs